Schottky barrier

Results: 40



#Item
21PHYSICAL REVIEW B 76, 075122 共2007兲  High-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO3 substrates A. Ruotolo,* C. Y. Lam, W. F. Cheng, K. H. Wong, and C. W. Leung Department of Applied P

PHYSICAL REVIEW B 76, 075122 共2007兲 High-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO3 substrates A. Ruotolo,* C. Y. Lam, W. F. Cheng, K. H. Wong, and C. W. Leung Department of Applied P

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Source URL: repository.lib.polyu.edu.hk

Language: English - Date: 2014-12-02 23:35:02
22Open Research Online The Open University’s repository of research publications and other research outputs Strong enhancement of the tunneling magnetoresistance by electron filtering in an Fe/MgO/Fe/GaAs(001) junction

Open Research Online The Open University’s repository of research publications and other research outputs Strong enhancement of the tunneling magnetoresistance by electron filtering in an Fe/MgO/Fe/GaAs(001) junction

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Source URL: oro.open.ac.uk

Language: English - Date: 2012-12-10 08:22:39
23MBR2035CT - MBR2060CT 20 A Schottky Barrier Rectifiers Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction

MBR2035CT - MBR2060CT 20 A Schottky Barrier Rectifiers Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction

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Source URL: allelcdn.upshotcommerce.com

Language: English - Date: 2014-06-11 13:11:00
24A.A.I. Al-Bassam and A.M.EL-Nggar, JMES Vol 2 Issue[removed]The Journal of MacroTrends in Energy and Sustainability MACROJOURNALS

A.A.I. Al-Bassam and A.M.EL-Nggar, JMES Vol 2 Issue[removed]The Journal of MacroTrends in Energy and Sustainability MACROJOURNALS

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Source URL: macrojournals.com

Language: English - Date: 2015-01-10 09:12:54
25Carnegie Mellon Materials Science and Engineering Seminar Series Materials Research at Carnegie Mellon Daniel Ewing Graduate Research Assistant

Carnegie Mellon Materials Science and Engineering Seminar Series Materials Research at Carnegie Mellon Daniel Ewing Graduate Research Assistant

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Source URL: www.materials.cmu.edu

Language: English - Date: 2007-04-14 21:36:52
26Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works

Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works

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Source URL: ieeecsc.org

Language: English - Date: 2014-04-17 10:58:09
27Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works

Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works

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Source URL: ewh.ieee.org

Language: English - Date: 2010-10-21 15:26:54
28APPLIED PHYSICS LETTERS 102, [removed]Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes Steven Chuang,1,2 Rehan Kapadia,1,2 Hui Fang,1,2,3 Ting Chia Chang,1 Wen-Chun Yen,4 Yu-Lun Chu

APPLIED PHYSICS LETTERS 102, [removed]Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes Steven Chuang,1,2 Rehan Kapadia,1,2 Hui Fang,1,2,3 Ting Chia Chang,1 Wen-Chun Yen,4 Yu-Lun Chu

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Source URL: nano.eecs.berkeley.edu

Language: English - Date: 2013-06-17 17:44:44
29Lateral IBIC characterization of a GaAs Schottky diode F.Fizzotti1, A.Lo Giudice2, C.Manfredotti1,2,3, C.Paolini1,2,3, E.Vittone1,2,3, F. Nava4, G.Egeni5, V.Rigato5 1 Experimental Physics Dept. University of Torino, 2 IN

Lateral IBIC characterization of a GaAs Schottky diode F.Fizzotti1, A.Lo Giudice2, C.Manfredotti1,2,3, C.Paolini1,2,3, E.Vittone1,2,3, F. Nava4, G.Egeni5, V.Rigato5 1 Experimental Physics Dept. University of Torino, 2 IN

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Source URL: www.dfs.unito.it

Language: English - Date: 2004-02-10 04:12:41
30Device Simulation of SWNT-FETs  Jing Guo1 and Mark Lundstrom2 1  Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611

Device Simulation of SWNT-FETs Jing Guo1 and Mark Lundstrom2 1 Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611

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Source URL: www.guo.ece.ufl.edu

Language: English - Date: 2006-08-21 13:26:01